Education:

2011-2017:Ph.D. College of Electronic Science and Engineering, Jilin University, China

2007-2011:M.Sc., College of Electronic Science and Engineering, Jilin University, China

Research Area:

Defect physics  Electronic structure  Optical properties

Selected Publications:

1. Dan Wang, D. Han, X.-B. Li, S.-Y. Xie, N.-K. Chen, W. Q. Tian, D. West, H.-B. Sun, and S. Zhang, Determination of formation and ionization energies of charged defects in two-dimensional materials, Phys. Rev. Lett. 114, 196801 (2015). https://doi.org/10.1103/PhysRevLett.114.196801

2. Dan Wang, D. Han, X.-B. Li, S.-Y. Xie, N.-K. Chen, W. Q. Tian, S. Zhang, and H.-B. Sun, Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: evaluated via constrained excitation, Appl. Phys. Lett. 109, 203113 (2016). http://dx.doi.org/10.1063/1.4967981

3. Dan Wang, X.-B. Li, D. Han, W. Q. Tian, and H.-B. Sun, Engineering two-dimensional electronics by semiconductor defects, Nano Today 16, 30 (2017). https://doi.org/10.1016/j.nantod.2017.07.001

4. Dan Wang, D. Han, X.-B. Li, N.-K. Chen, D. West, V. Meunier, S. Zhang, and H.-B. Sun, Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: formulation and application to few-layer black phosphorus, Phys. Rev. B 96, 155424 (2017). https://doi.org/10.1103/PhysRevB.96.155424

5. Dan Wang, X.-B. Li, and H.-B. Sun, Native defects and substitutional impurities in two-dimensional monolayer InSe, Nanoscale 9, 11619 (2017). http://dx.doi.org/10.1039/C7NR03389C

6. Dan Wang, D. Han, X.-B. Li, N.-K. Chen, S.-Y. Xie, D. West, W. Q. Tian, V. Meunier, H.-B. Sun, and S. Zhang, Low-energy excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport (Submitted) 2018.