Biosketch:

2019.09 To Present: Full Professor, College of Electronic Science and Engineering, Jilin University
2014.09 To 2019.09: Associate Professor, College of Electronic Science and Engineering, Jilin University
2010.07 To 2014.09: Lecturer, College of Electronic Science and Engineering, Jilin University
2007.09 To 2010.06: Ph.D., College of Electronic Science and Engineering, Jilin University, Research on Semiconductor Physics
2005.09 To 2007.06: M.Sc., College of Electronic Science and Engineering, Jilin University, Research on Organic Transistor
2001.09 To 2005.06: B.Sc., College of Electronic Science and Engineering, Jilin University, Study on Microelectronics

Research Area:

Now I mainly focus on the key problems in microelectronics and optoelectronics with the first-principles calculation. These topics include (1) doping and defect physics in wide band-gap semiconductor, such as ZnO and SiO2; (2) phase change storage of Ge-Sb-Te alloys including the mechanism of memory and the design of other new storage material; (3) low-dimension semiconductor physics, for example ZnO surface and graphene/graphene oxide.

Selected Publications:

1. M. Zhu, M. J. Xia, F. Rao, Xian-Bin Li (Co-corresponding Author), L. C. Wu, X. L. Ji, S. L. Lv, Z. T. Song, S. L. Feng, Hong-Bo Sun, and S. B. Zhang, ”One Order of Magnitude Faster Phase Change at Reduced Power in Ti-Sb-Te”, Nature Communication 5, 4086 (2014).

2. X. Q. Liu, Xian-Bin Li, L. Zhang, Y.Q. Cheng, Z.G. Yan, M. Xu, X. D. Han, S.B. Zhang, Z. Zhang, and E. Ma, Reply to the Comments on the Work "New Structural Picture of the Ge₂Sb₂Te₅ Phase-Change Alloy",Phys. Rev. Lett. 108, 239602 (2012).

3. Xian-Bin Li, X. Q. Liu, Xin Liu, Dong Han, Z. Zhang, X. D. Han, Hong-Bo Sun, and S. B. Zhang, “Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys”, Phys. Rev. Lett. 107, 015501 (2011).

4. X.Q. Liu, Xian-Bin Li, L. Zhang, Y. Q. Cheng, Z. G. Yan, M. Xu, X. D. Han, S. B. Zhang, Z. Zhang, and E. Ma, “New Structural Picture of the Ge₂Sb₂Te₅ Phase-Change Alloy”, Phys. Rev. Lett. 106, 025501 (2011).

5. L. F. Li, Y. L. Wang, S. Y. Xie, Xian-Bin Li, Y. Q. Wang, R. T. Wu, Hong-Bo Sun, S. B. Zhang, and H. J. Gao, “Two-Dimensional Transition Metal Honeycomb Realized: Hf on Ir(111)”, Nano Lett. 13, 4671 (2013). (Highlight in Nature Nanotechnology and Nature China)

6. Y. H. Yue, N. K. Chen, Xian-Bin Li, S. B. Zhang, Z. Zhang, M. W. Chen, and X. D. Han, “Crystalline Liquid and Rubber-Like Behavior in Cu Nanowires” Nano Lett. 13, 3812 (2013).

7. S. Y. Xie, Xian-Bin Li (Corresponding Author), W. Q. Tian, N. K. Chen, X. L. Zhang, Y. L. Wang, S. B. Zhang, and Hong-Bo Sun, “First-Principles Calculations of a Robust Two-Dimensional Boron Honeycomb Sandwiching a Triangular Molybdenum Layer”, Phys. Rev. B 90, 035447 (2014).

8. D. Han, Y. Y. Sun, J. Bang, Y. Y. Zhang, Hong-Bo Sun, Xian-Bin Li, and S. B. Zhang, “Deep Electron Traps and Origin of p-Type Conductivity in the Earth-Abundant Solar-Cell Material Cu₂ZnSnS₄”, Phys. Rev. B 87, 155206 (2013).

9. Dong Han, D. West, Xian-Bin Li, Sheng-Yi Xie, Hong-Bo Sun and S.B. Zhang, “Impurity Doping in SiO₂: A First-Principles Study” Phys. Rev. B 82, 155132 (2010).

10. Xian-Bin Li, S. Limpijunong, W.Q. Tian, Hong-Bo Sun, and S.B. Zhang, “Hydrogen in ZnO Revisited:Bond Center versus Antibonding Site” Phys. Rev. B 78, 113203 (2008).

11. S. Y. Xie, Xian-Bin Li (Corresponding Author), Y. Y. Sun, Y. L. Zhang, D. Han, W. Q. Tian, W. Q. Wang, Y. S. Zheng, S. B. Zhang, and Hong-Bo Sun, “Theoretical Characterization of Reduction Dynamics for Graphene Oxide by Alkaline-Earth Metals” Carbon 52, 122 (2013).

12. Xian-Bin Li, X. Q. Liu, X. D. Han, and S. B. Zhang, “Role of Electronic Excitation in Phase-Change Memory Materials: A Brief Review” Phys. Status Solidi B, 249, 1861 (2012). (Invited Review Dedicated to Sir Stanford R. Ovshinsky, the Discoverer of Phase-Change Memory Phenomenon).