Education
2013.09-2015.06: PhD, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology(SIMIT), Chinese Academy of Science (CAS), China.
2012.09-2013.06: PhD exchange student, College of Electronic Science and Engineering, Jilin University, China.
2010.09-2012.06: PdD candidate, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology(SIMIT), Chinese Academy of Science (CAS), China.
2006.09-2010.06: B. Sc., College of Engineering and Applied Sciences, Nanjing University, China.
Reseach Area:
Novel materials for phase change memory with first-principle calculationSelected Publications:
[1] Mengjiao Xia, Feng Rao, Zhitang
Song, Kun Ren, Liangcai Wu, Bo Liu and Songlin Feng, An Improvement of the
Thermal Stability of SnTe through Nitrogen Doping. Chin. Phys. Lett. 2013, 30: 037401;
[2] Mengjiao Xia, Keyuan Ding, Feng
Rao, Xianbin Li, Liangcai Wu and Zhitang Song, Aluminum-Centered Tetrahedron-Octahedron
Transition in Advancing Al-Sb-Te Phase Change Properties. Sci. Rep. 2015,
5:8548;
[3] Mengjiao Xia, Min Zhu, Yuchan
Wang, Zhitang Song, Feng Rao, Liangcai Wu, Yan Cheng and Sannian Song, Ti-Sb-Te
alloy: A Candidate for Fast and Long-life Phase-Change memory. ACS Appl.
Mater. Interfaces, 2015, 7: 7627.
[4] Min Zhu, Mengjiao Xia, Feng Rao, Xianbin Li, Liangcai Wu, Xinglong
Ji, Shilong Lv, Zhitang Song, Songlin Feng, Hongbo
Sun and Shengbai Zhang, One
order of magnitude faster phase change at reduced power in Ti-Sb-Te. Nat.
Commun. 2014, 5: 4086;
[5] Xilin Zhou, Mengjiao Xia, Feng
Rao, Liangcai Wu, Xianbin Li, Zhitang Song, Songlin Feng and Hongbo Sun,
Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application. ACS Appl.
Mater. Interfaces,
2014, 6: 14207;
[6] Kun Ren, Mengjiao Xia, Feng Rao,
Zhitang Song, Keyuan Ding, Xinglong Ji, Liangcai Wu, Bo Liu and Songlin Feng,
Study on the nitrogen-doped W-Sb-Te material for phase change memory
application. Appl. Phys. Lett. 2014, 104: 173102.